APTM10HM09FT3G MOSFET Array Datasheet & Equivalents
N-Channel Array
-
High-Voltage
MICROCHIP
Vds Max
100V
Id Max
139A
Rds(on)
10mΩ@10V
Vgs(th)
4V
Quick Reference
The APTM10HM09FT3G is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 139A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 139A | Max current handling |
| Power Dissipation (Pd) | 390W | Max thermal limit |
| On-Resistance (Rds(on)) | 10mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 350nC@10V | Switching energy |
| Input Capacitance (Ciss) | 9.875nF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.94nF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ISG0616N10NM5HSCATMA1 | N-Channel Array | - | 100V | 139A | 3.4mΩ@10V 4.3mΩ@6V |
3V | Infineon 📄 PDF |
| APTM10HM05FG | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10DHM05G | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |