APTM20HM08FG MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
200V
Id Max
208A
Rds(on)
10mΩ@10V
Vgs(th)
5V

Quick Reference

The APTM20HM08FG is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 200V and a continuous drain current of 208A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)208AMax current handling
Power Dissipation (Pd)781WMax thermal limit
On-Resistance (Rds(on))10mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)280nC@10VSwitching energy
Input Capacitance (Ciss)14.4nFInternal gate capacitance
Output Capacitance (Coss)4.66nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTM20AM06SG N-Channel Array - 200V 300A 7.2mΩ@10V 5V
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