IXTH34N65X2 MOSFET Datasheet & Specifications

N-Channel TO-247-3 High-Voltage Littelfuse/IXYS
Vds Max
650V
Id Max
34A
Rds(on)
96mฮฉ@10V
Vgs(th)
5V
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Quick Reference

The IXTH34N65X2 is an N-Channel MOSFET in a TO-247-3 package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 34A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)34AMax current handling
Power Dissipation (Pd)540WMax thermal limit
On-Resistance (Rds(on))96mฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)54nC@10VSwitching energy
Input Capacitance (Ciss)3nFInternal gate capacitance
Output Capacitance (Coss)2.16nFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
FCH110N65F-F155 N-Channel TO-247-3 650V 35A 110mฮฉ@10V 5V
onsemi ๐Ÿ“„ PDF
STW40N95DK5 N-Channel TO-247-3 950V 38A 130mฮฉ@10V 5V
ST ๐Ÿ“„ PDF
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mฮฉ@20V 2.5V
Tokmas ๐Ÿ“„ PDF
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mฮฉ@15V 2.5V
SUPSiC ๐Ÿ“„ PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mฮฉ@15V 2.7V
SUPSiC ๐Ÿ“„ PDF
GC2M0080120D1 N-Channel TO-247-3 1.2kV 34A 80mฮฉ 4V
SUPSiC ๐Ÿ“„ PDF
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mฮฉ@20V 3.2V
SUPSiC ๐Ÿ“„ PDF
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V
Tokmas ๐Ÿ“„ PDF
High-Voltage N-Channel TO-247 N-Channel