FCH110N65F-F155 MOSFET Datasheet & Equivalents

N-Channel TO-247-3 High-Voltage onsemi
Vds Max
650V
Id Max
35A
Rds(on)
110mΩ@10V
Vgs(th)
5V

Quick Reference

The FCH110N65F-F155 is an N-Channel MOSFET in a TO-247-3 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 35A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)35AMax current handling
Power Dissipation (Pd)357WMax thermal limit
On-Resistance (Rds(on))110mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)145nC@10VSwitching energy
Input Capacitance (Ciss)4.895nFInternal gate capacitance
Output Capacitance (Coss)145pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STW40N95DK5 N-Channel TO-247-3 950V 38A 130mΩ@10V 5V
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mΩ@20V 2.5V
Tokmas 📄 PDF
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mΩ@15V 2.5V
SUPSiC 📄 PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mΩ@20V 3.2V
SUPSiC 📄 PDF
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V
Tokmas 📄 PDF