ISP26DP06NMS MOSFET Datasheet & Specifications

P-Channel SOT-223 Logic-Level Infineon
Vds Max
60V
Id Max
1.9A
Rds(on)
189mΩ@10V
Vgs(th)
3V

Quick Reference

The ISP26DP06NMS is an P-Channel MOSFET in a SOT-223 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 1.9A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)1.9AMax current handling
Power Dissipation (Pd)5WMax thermal limit
On-Resistance (Rds(on))189mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)10.8nC@10VSwitching energy
Input Capacitance (Ciss)420pFInternal gate capacitance
Output Capacitance (Coss)62pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT06P460S P-Channel SOT-223 60V 8A 26mΩ@10V 1.5V
DMP6023LE-13 P-Channel SOT-223 60V 7A 35mΩ@4.5V 3V
DIODES 📄 PDF
NTF2955PT1G-VB P-Channel SOT-223 60V 7A 55mΩ@10V
65mΩ@4.5V
2.5V
VBsemi Elec 📄 PDF
BSP170P-VB P-Channel SOT-223 60V 7A 55mΩ@10V 2.5V
VBsemi Elec 📄 PDF
HT06P1H3S P-Channel SOT-223 60V 4.3A 90mΩ@10V
125mΩ@4.5V
2.5V
BSP613PH6327 P-Channel SOT-223 60V 2.9A 110mΩ@10V 3V
Infineon 📄 PDF
S-LP03N060TZHG P-Channel SOT-223 60V 2.8A 170mΩ@10V
200mΩ@4.5V
3V
ISP25DP06LMS P-Channel SOT-223 60V 1.9A 177mΩ@10V
211mΩ@4.5V
1.5V
Infineon 📄 PDF
HSL6107 P-Channel SOT-223 60V 2.3A 180mΩ@10V 2.5V
HUASHUO 📄 PDF
WSG02P06 P-Channel SOT-223 60V 2A 215mΩ@10V 3V
Winsok Semicon 📄 PDF
BSP171PH6327 P-Channel SOT-223 60V 1.9A 450mΩ@4.5V 2V
Infineon 📄 PDF
DMP10H400SE-13 P-Channel SOT-223 100V 2.3A 203mΩ@10V
241mΩ@4.5V
2.2V
DIODES 📄 PDF