IRF4905STRLPBF-JSM MOSFET Datasheet & Specifications

P-Channel TO-263 Logic-Level JSMSEMI
Vds Max
60V
Id Max
65A
Rds(on)
20mΩ@10V
Vgs(th)
2.2V

Quick Reference

The IRF4905STRLPBF-JSM is an P-Channel MOSFET in a TO-263 package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 65A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-263Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)65AMax current handling
Power Dissipation (Pd)280WMax thermal limit
On-Resistance (Rds(on))20mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)114nC@10VSwitching energy
Input Capacitance (Ciss)4.399nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XRS150P06G P-Channel TO-263 60V 150A 3.4mΩ@10V 2.4V
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SUM110P06-08L-TP P-Channel TO-263 60V 110A 6.5mΩ@10V 2V
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SUM110P06-07L-TP P-Channel TO-263 60V 110A 6.5mΩ@10V 2V
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IRF4905S P-Channel TO-263 60V 90A 6.6mΩ@10V 2.5V
S110P06G P-Channel TO-263 60V 110A 7mΩ@10V 2.4V
HSH90P06 P-Channel TO-263 60V 85A 7.5mΩ@10V 1.4V
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SQM120P06-07L_GE3 P-Channel TO-263 60V 120A 8.8mΩ@4.5V 2.5V
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HSH8129 P-Channel TO-263 80V 120A 9mΩ@4.5V 2.5V
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SUM70101EL-GE3 P-Channel TO-263 100V 120A 10.1mΩ@10V 1.5V
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HSH0129 P-Channel TO-263 100V 130A 12mΩ@10V 1.9V
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