SQM120P06-07L_GE3 MOSFET Datasheet & Specifications
P-Channel
TO-263
Logic-Level
VISHAY
Vds Max
60V
Id Max
120A
Rds(on)
8.8mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQM120P06-07L_GE3 is an P-Channel MOSFET in a TO-263 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 375W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 270nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14.28nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.034nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XRS150P06G | P-Channel | TO-263 | 60V | 150A | 3.4mΩ@10V | 2.4V | XNRUSEMI 📄 PDF |
| HSH8129 | P-Channel | TO-263 | 80V | 120A | 9mΩ@4.5V | 2.5V | HUASHUO 📄 PDF |
| SUM70101EL-GE3 | P-Channel | TO-263 | 100V | 120A | 10.1mΩ@10V | 1.5V | VISHAY 📄 PDF |
| XRS120P10G | P-Channel | TO-263 | 100V | 120A | 12mΩ@10V | 3V | XNRUSEMI 📄 PDF |
| HSH0129 | P-Channel | TO-263 | 100V | 130A | 12mΩ@10V | 1.9V | HUASHUO 📄 PDF |