SUM70101EL-GE3 MOSFET Datasheet & Specifications
P-Channel
TO-263
Logic-Level
VISHAY
Vds Max
100V
Id Max
120A
Rds(on)
10.1mΩ@10V
Vgs(th)
1.5V
Quick Reference
The SUM70101EL-GE3 is an P-Channel MOSFET in a TO-263 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 10.1mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 125nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.18nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |