SUM110P06-07L-TP MOSFET Datasheet & Specifications

P-Channel TO-263 Logic-Level TECH PUBLIC
Vds Max
60V
Id Max
110A
Rds(on)
6.5mΩ@10V
Vgs(th)
2V

Quick Reference

The SUM110P06-07L-TP is an P-Channel MOSFET in a TO-263 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 110A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageTO-263Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)110AMax current handling
Power Dissipation (Pd)120WMax thermal limit
On-Resistance (Rds(on))6.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)81nC@30VSwitching energy
Input Capacitance (Ciss)5.56nFInternal gate capacitance
Output Capacitance (Coss)934pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XRS150P06G P-Channel TO-263 60V 150A 3.4mΩ@10V 2.4V
XNRUSEMI 📄 PDF
SUM110P06-08L-TP P-Channel TO-263 60V 110A 6.5mΩ@10V 2V
TECH PUBLIC 📄 PDF
S110P06G P-Channel TO-263 60V 110A 7mΩ@10V 2.4V
SQM120P06-07L_GE3 P-Channel TO-263 60V 120A 8.8mΩ@4.5V 2.5V
VISHAY 📄 PDF
HSH8129 P-Channel TO-263 80V 120A 9mΩ@4.5V 2.5V
HUASHUO 📄 PDF
SUM70101EL-GE3 P-Channel TO-263 100V 120A 10.1mΩ@10V 1.5V
VISHAY 📄 PDF
HSH0129 P-Channel TO-263 100V 130A 12mΩ@10V 1.9V
HUASHUO 📄 PDF