IPLU250N04S4-1R7 MOSFET Datasheet & Specifications

N-Channel HSOF-8 High-Current Infineon
Vds Max
40V
Id Max
250A
Rds(on)
1.7mΩ@10V
Vgs(th)
4V

Quick Reference

The IPLU250N04S4-1R7 is an N-Channel MOSFET in a HSOF-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 250A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageHSOF-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)250AMax current handling
Power Dissipation (Pd)188WMax thermal limit
On-Resistance (Rds(on))1.7mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)100nC@10VSwitching energy
Input Capacitance (Ciss)7.9nFInternal gate capacitance
Output Capacitance (Coss)1.8nFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IPT007N06N(TOKMAS) N-Channel HSOF-8 60V 500A 0.68mΩ@10V 4V
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IPT012N08N5 N-Channel HSOF-8 80V 300A 1.2mΩ@10V 3V
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IPT012N08N5(TOKMAS) N-Channel HSOF-8 85V 300A 0.9mΩ 2V
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IPT015N10N5(TOKMAS) N-Channel HSOF-8 100V 500A 1.35mΩ 4V
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IPT015N10N5 N-Channel HSOF-8 100V 300A 2mΩ@6V 3.8V
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IPT017N12NM6ATMA1 N-Channel HSOF-8 120V 331A 1.7mΩ@10V 3.6V
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IPT025N15NM6ATMA1 N-Channel HSOF-8 150V 263A 1.9mΩ@15V 3.5V
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