IPT012N08N5(TOKMAS) MOSFET Datasheet & Specifications
N-Channel
HSOF-8
Logic-Level
Tokmas
Vds Max
85V
Id Max
300A
Rds(on)
0.9mΩ
Vgs(th)
2V
Quick Reference
The IPT012N08N5(TOKMAS) is an N-Channel MOSFET in a HSOF-8 package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 85V and a continuous drain current of 300A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Tokmas | Original Manufacturer |
| Package | HSOF-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 85V | Max breakdown voltage |
| Continuous Drain Current (Id) | 300A | Max current handling |
| Power Dissipation (Pd) | 500W | Max thermal limit |
| On-Resistance (Rds(on)) | 0.9mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 240nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14.49nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.35nF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||