IPT015N10N5 MOSFET Datasheet & Specifications
N-Channel
HSOF-8
High-Current
Infineon
Vds Max
100V
Id Max
300A
Rds(on)
2mΩ@6V
Vgs(th)
3.8V
Quick Reference
The IPT015N10N5 is an N-Channel MOSFET in a HSOF-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 300A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | HSOF-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 300A | Max current handling |
| Power Dissipation (Pd) | 375W | Max thermal limit |
| On-Resistance (Rds(on)) | 2mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.8V | Voltage required to turn on |
| Gate Charge (Qg) | 211nC@10V | Switching energy |
| Input Capacitance (Ciss) | 16nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.3nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPT015N10N5(TOKMAS) | N-Channel | HSOF-8 | 100V | 500A | 1.35mΩ | 4V | Tokmas 📄 PDF |
| IPT017N12NM6ATMA1 | N-Channel | HSOF-8 | 120V | 331A | 1.7mΩ@10V | 3.6V | Infineon 📄 PDF |