IPT007N06N(TOKMAS) MOSFET Datasheet & Specifications
N-Channel
HSOF-8
High-Current
Tokmas
Vds Max
60V
Id Max
500A
Rds(on)
0.68mΩ@10V
Vgs(th)
4V
Quick Reference
The IPT007N06N(TOKMAS) is an N-Channel MOSFET in a HSOF-8 package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 500A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Tokmas | Original Manufacturer |
| Package | HSOF-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 500A | Max current handling |
| Power Dissipation (Pd) | 375W | Max thermal limit |
| On-Resistance (Rds(on)) | 0.68mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 274nC@10V | Switching energy |
| Input Capacitance (Ciss) | 17.306nF | Internal gate capacitance |
| Output Capacitance (Coss) | 4.764nF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPT015N10N5(TOKMAS) | N-Channel | HSOF-8 | 100V | 500A | 1.35mΩ | 4V | Tokmas 📄 PDF |