GC2M0160120K MOSFET Datasheet & Specifications

N-Channel TO-247-4 High-Voltage SUPSiC
Vds Max
1.2kV
Id Max
18A
Rds(on)
196mΩ
Vgs(th)
4V

Quick Reference

The GC2M0160120K is an N-Channel MOSFET in a TO-247-4 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 18A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSUPSiCOriginal Manufacturer
PackageTO-247-4Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)18AMax current handling
Power Dissipation (Pd)125WMax thermal limit
On-Resistance (Rds(on))196mΩResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)40nCSwitching energy
Input Capacitance (Ciss)606pFInternal gate capacitance
Output Capacitance (Coss)55pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IMZA120R020M1HXKSA1 N-Channel TO-247-4 1.2kV 98A 19mΩ@18V 4.2V
Infineon 📄 PDF
GC3M0021120K N-Channel TO-247-4 1.2kV 100A 21mΩ@15V 2.5V
SUPSiC 📄 PDF
BCZ120N21M1 N-Channel TO-247-4 1.2kV 100A 21mΩ 3V
Bestirpower 📄 PDF
C3M0021120K N-Channel TO-247-4 1.2kV 100A 28.8mΩ 3.6V
Wolfspeed 📄 PDF
MSC025SMA120B4 N-Channel TO-247-4 1.2kV 103A 31mΩ 2.8V
MICROCHIP 📄 PDF
GC3M0032120K N-Channel TO-247-4 1.2kV 63A 32mΩ@15V 2.5V
SUPSiC 📄 PDF
BCZ120N32W1 N-Channel TO-247-4 1.2kV 69A 32mΩ 2.9V
Bestirpower 📄 PDF
GC3M0040120K N-Channel TO-247-4 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF
C3M0040120K N-Channel TO-247-4 1.2kV 66A 53.5mΩ 3.6V
Wolfspeed 📄 PDF
M4M-0040-120K N-Channel TO-247-4 1.2kV 60A 59mΩ 4V
Megain 📄 PDF
C3M0075120K-A N-Channel TO-247-4 1.2kV 32A 75mΩ 3.6V
Wolfspeed 📄 PDF
M2M-0080-120K N-Channel TO-247-4 1.2kV 28A 98mΩ 4V
Megain 📄 PDF