GC3M0021120K MOSFET Datasheet & Specifications
N-Channel
TO-247-4
Logic-Level
SUPSiC
Vds Max
1.2kV
Id Max
100A
Rds(on)
21mΩ@15V
Vgs(th)
2.5V
Quick Reference
The GC3M0021120K is an N-Channel MOSFET in a TO-247-4 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SUPSiC | Original Manufacturer |
| Package | TO-247-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 469W | Max thermal limit |
| On-Resistance (Rds(on)) | 21mΩ@15V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 162nC | Switching energy |
| Input Capacitance (Ciss) | 4.818nF | Internal gate capacitance |
| Output Capacitance (Coss) | 180pF | Internal output capacitance |
| Operating Temp | -40℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BCZ120N21M1 | N-Channel | TO-247-4 | 1.2kV | 100A | 21mΩ | 3V | Bestirpower 📄 PDF |
| MSC025SMA120B4 | N-Channel | TO-247-4 | 1.2kV | 103A | 31mΩ | 2.8V | MICROCHIP 📄 PDF |