BCZ120N21M1 MOSFET Datasheet & Specifications

N-Channel TO-247-4 Logic-Level Bestirpower
Vds Max
1.2kV
Id Max
100A
Rds(on)
21mΩ
Vgs(th)
3V

Quick Reference

The BCZ120N21M1 is an N-Channel MOSFET in a TO-247-4 package, manufactured by Bestirpower. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 100A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerBestirpowerOriginal Manufacturer
PackageTO-247-4Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)100AMax current handling
Power Dissipation (Pd)469WMax thermal limit
On-Resistance (Rds(on))21mΩResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)198nCSwitching energy
Input Capacitance (Ciss)3.741nFInternal gate capacitance
Output Capacitance (Coss)224pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
GC3M0021120K N-Channel TO-247-4 1.2kV 100A 21mΩ@15V 2.5V
SUPSiC 📄 PDF
MSC025SMA120B4 N-Channel TO-247-4 1.2kV 103A 31mΩ 2.8V
MICROCHIP 📄 PDF