IMZA120R020M1HXKSA1 MOSFET Datasheet & Specifications

N-Channel TO-247-4 High-Voltage Infineon
Vds Max
1.2kV
Id Max
98A
Rds(on)
19mΩ@18V
Vgs(th)
4.2V

Quick Reference

The IMZA120R020M1HXKSA1 is an N-Channel MOSFET in a TO-247-4 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 98A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-247-4Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)98AMax current handling
Power Dissipation (Pd)375WMax thermal limit
On-Resistance (Rds(on))19mΩ@18VResistance when turned fully on
Gate Threshold (Vgs(th))4.2VVoltage required to turn on
Gate Charge (Qg)27.1nCSwitching energy
Input Capacitance (Ciss)3.46nFInternal gate capacitance
Output Capacitance (Coss)159pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
GC3M0021120K N-Channel TO-247-4 1.2kV 100A 21mΩ@15V 2.5V
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BCZ120N21M1 N-Channel TO-247-4 1.2kV 100A 21mΩ 3V
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C3M0021120K N-Channel TO-247-4 1.2kV 100A 28.8mΩ 3.6V
Wolfspeed 📄 PDF
MSC025SMA120B4 N-Channel TO-247-4 1.2kV 103A 31mΩ 2.8V
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