FMMT494QTA Datasheet & Equivalents

NPN SOT-23 General Purpose DIODES
VCEO
120V
Ic Max
1A
Pd Max
500mW
hFE Gain
60

Quick Reference

The FMMT494QTA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 120V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT624TA NPN SOT-23 125V 1A 100 625mW
FMMT495TA NPN SOT-23 150V 1A 50 500mW
FMMT495TC NPN SOT-23 150V 1A 50 500mW
FMMT495 NPN SOT-23 150V 1A 50 500mW
FMMT625TA NPN SOT-23 150V 1A 30 625mW
FMMT495 NPN SOT-23 150V 1A 100 250mW
FMMT455TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT494TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT624TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT495 NPN SOT-23 150V 1A 300 250mW