FMMT624TA-HXY Datasheet & Equivalents

NPN SOT-23 General Purpose HXY MOSFET
VCEO
150V
Ic Max
1A
Pd Max
250mW
hFE Gain
300

Quick Reference

The FMMT624TA-HXY is a NPN bipolar junction transistor in a SOT-23 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 150V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)250mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT455TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT494TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT495 NPN SOT-23 150V 1A 300 250mW
FMMT495 NPN SOT-23 150V 1A 100 250mW
FMMT495TA NPN SOT-23 150V 1A 50 500mW
FMMT495TC NPN SOT-23 150V 1A 50 500mW
FMMT495 NPN SOT-23 150V 1A 50 500mW
FMMT625TA NPN SOT-23 150V 1A 30 625mW