FMMT495 Datasheet & Equivalents
NPN
SOT-23
General Purpose
MSKSEMI
VCEO
150V
Ic Max
1A
Pd Max
250mW
hFE Gain
300
Quick Reference
The FMMT495 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by MSKSEMI. It supports a breakdown voltage of 150V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 150V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FMMT455TA-HXY | NPN | SOT-23 | 150V | 1A | 300 | 250mW | HXY MOSFET 📄 PDF |
| FMMT494TA-HXY | NPN | SOT-23 | 150V | 1A | 300 | 250mW | HXY MOSFET 📄 PDF |
| FMMT624TA-HXY | NPN | SOT-23 | 150V | 1A | 300 | 250mW | HXY MOSFET 📄 PDF |
| FMMT495TA | NPN | SOT-23 | 150V | 1A | 50 | 500mW | DIODES 📄 PDF |
| FMMT495TC | NPN | SOT-23 | 150V | 1A | 50 | 500mW | DIODES 📄 PDF |
| FMMT625TA | NPN | SOT-23 | 150V | 1A | 30 | 625mW | DIODES 📄 PDF |