FMMT625TA Datasheet & Equivalents

NPN SOT-23 General Purpose DIODES
VCEO
150V
Ic Max
1A
Pd Max
625mW
hFE Gain
30

Quick Reference

The FMMT625TA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 150V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)625mWMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)135MHzMax operating frequency
Saturation Voltage (VCEsat)110mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT495TA NPN SOT-23 150V 1A 50 500mW
FMMT495TC NPN SOT-23 150V 1A 50 500mW
FMMT495 NPN SOT-23 150V 1A 50 500mW
FMMT495 NPN SOT-23 150V 1A 100 250mW
FMMT455TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT494TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT624TA-HXY NPN SOT-23 150V 1A 300 250mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT495 NPN SOT-23 150V 1A 300 250mW