DXT651Q-13 Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
60V
Ic Max
3A
Pd Max
2W
hFE Gain
300

Quick Reference

The DXT651Q-13 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
DXT651 NPN SOT-89 60V 3A 300 1W
2SD2391 NPN SOT-89 60V 3A 300 2W
2STF1360 NPN SOT-89 60V 3A 160 1.4W
2SC5824T100R NPN SOT-89 60V 3A 120 2W
ZXTN2010ZTA-CN NPN SOT-89 60V 4.5A 300 1W
ChipNobo ๐Ÿ“„ PDF
ZXTN2010ZTA NPN SOT-89 60V 5A 55 2.1W
PBSS304 NPN SOT-89 60V 5A 40 2.1W
2SC5566-TP NPN SOT-89 60V 5.2A 520 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPZXTN19055DZTA NPN SOT-89 60V 5.2A 520 500mW
TECH PUBLIC ๐Ÿ“„ PDF
PBSS304NX NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPBT60N5T3 NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPLBTN560Y3T1G NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
D882H-JSM NPN SOT-89 70V 3A 400 500mW
D882H(RANGE:160-320) NPN SOT-89 70V 3A 60 500mW
ZXTN2011ZTA NPN SOT-89 100V 4.5A 100 2.1W