D882H-JSM Datasheet & Equivalents
NPN
SOT-89
General Purpose
JSMSEMI
VCEO
70V
Ic Max
3A
Pd Max
500mW
hFE Gain
400
Quick Reference
The D882H-JSM is a NPN bipolar junction transistor in a SOT-89 package, manufactured by JSMSEMI. It supports a breakdown voltage of 70V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 70V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 400 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| D882H(RANGE:160-320) | NPN | SOT-89 | 70V | 3A | 60 | 500mW | JSCJ 📄 PDF |
| ZXTN2011ZTA | NPN | SOT-89 | 100V | 4.5A | 100 | 2.1W | DIODES 📄 PDF |