TPLBTN560Y3T1G Datasheet & Equivalents
NPN
SOT-89
General Purpose
TECH PUBLIC
VCEO
60V
Ic Max
5.2A
Pd Max
500mW
hFE Gain
-
Quick Reference
The TPLBTN560Y3T1G is a NPN bipolar junction transistor in a SOT-89 package, manufactured by TECH PUBLIC. It supports a breakdown voltage of 60V and continuous collector current of 5.2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 5.2A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | - | Base signal amplification ratio |
| Transition Frequency (fT) | 30MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 35mV@0.5A,0.05A | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PBSS304NX | NPN | SOT-89 | 60V | 5.2A | - | 500mW | TECH PUBLIC 📄 PDF |
| TPBT60N5T3 | NPN | SOT-89 | 60V | 5.2A | - | 500mW | TECH PUBLIC 📄 PDF |
| 2SC5566-TP | NPN | SOT-89 | 60V | 5.2A | 520 | 500mW | TECH PUBLIC 📄 PDF |
| TPZXTN19055DZTA | NPN | SOT-89 | 60V | 5.2A | 520 | 500mW | TECH PUBLIC 📄 PDF |