ZXTN2010ZTA Datasheet & Equivalents
NPN
SOT-89
High Power
DIODES
VCEO
60V
Ic Max
5A
Pd Max
2.1W
hFE Gain
55
Quick Reference
The ZXTN2010ZTA is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 5A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| DC Current Gain (hFE) | 55 | Base signal amplification ratio |
| Transition Frequency (fT) | 130MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 65mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PBSS304 | NPN | SOT-89 | 60V | 5A | 40 | 2.1W | Slkor 📄 PDF |
| PBSS304NX | NPN | SOT-89 | 60V | 5.2A | - | 500mW | TECH PUBLIC 📄 PDF |
| TPBT60N5T3 | NPN | SOT-89 | 60V | 5.2A | - | 500mW | TECH PUBLIC 📄 PDF |
| TPLBTN560Y3T1G | NPN | SOT-89 | 60V | 5.2A | - | 500mW | TECH PUBLIC 📄 PDF |
| 2SC5566-TP | NPN | SOT-89 | 60V | 5.2A | 520 | 500mW | TECH PUBLIC 📄 PDF |
| TPZXTN19055DZTA | NPN | SOT-89 | 60V | 5.2A | 520 | 500mW | TECH PUBLIC 📄 PDF |