DPLS350Y-13 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
50V
Ic Max
3A
Pd Max
2W
hFE Gain
80

Quick Reference

The DPLS350Y-13 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 50V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)390mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2DA1797Q-13 PNP SOT-89 50V 3A 82 900mW
PBSS5350X-GK PNP SOT-89 50V 3A - 550mW
GOODWORK ๐Ÿ“„ PDF
LBSS5350SY3T1G PNP SOT-89 50V 3A 200 550mW
PBSS5350X PNP SOT-89 50V 3A 200 1.4W
Nexperia ๐Ÿ“„ PDF
115 PNP SOT-89 50V 3A 200 1.6W
Nexperia ๐Ÿ“„ PDF
PBSS5350X PNP SOT-89 50V 3A 400 500mW
135 PNP SOT-89 50V 4A 200 3.5W
2SB1124T PNP SOT-89 50V 7A 200 3.5W
2SA2013-TD-E PNP SOT-89 60V 3A 100 1W
2SA2016-TD-E PNP SOT-89 60V 3A 120 2W
DXT751-13 PNP SOT-89 60V 3A 150 1.35W
Nexperia ๐Ÿ“„ PDF
2SA2071T100Q PNP SOT-89 60V 3A 200 1.4W
PBSS5360XX PNP SOT-89 60V 3A 300 2W
2STF2360 PNP SOT-89 60V 3A 300 1W
2SB1561 PNP SOT-89 60V 4.3A 100 550mW
DXT751 PNP SOT-89 60V 4.3A 45 1.5W
LBTP560Y3T1G PNP SOT-89 60V 4.3A 300 2.1W
ZXTP2012ZTA PNP SOT-89 60V 5A 120 2.5W
Nexperia ๐Ÿ“„ PDF
PBSS304PX PNP SOT-89 80V 4A 200 1.4W
Nexperia ๐Ÿ“„ PDF