2SA2016-TD-E Datasheet & Equivalents
PNP
SOT-89
High Power
onsemi
VCEO
50V
Ic Max
7A
Pd Max
3.5W
hFE Gain
200
Quick Reference
The 2SA2016-TD-E is a PNP bipolar junction transistor in a SOT-89 package, manufactured by onsemi. It supports a breakdown voltage of 50V and continuous collector current of 7A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 7A | Max current handling |
| Power Dissipation (Pd) | 3.5W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 330MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 160mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||