ZXTP2012ZTA Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
60V
Ic Max
4.3A
Pd Max
1.5W
hFE Gain
45

Quick Reference

The ZXTP2012ZTA is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 4.3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)4.3AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)45Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)65mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current20nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LBTP560Y3T1G PNP SOT-89 60V 4.3A 100 550mW
PBSS304PX PNP SOT-89 60V 4.3A 300 2.1W
PBSS4041PX PNP SOT-89 60V 5A 120 2.5W
Nexperia ๐Ÿ“„ PDF