2SA2013-TD-E Datasheet & Equivalents
PNP
SOT-89
High Power
onsemi
VCEO
50V
Ic Max
4A
Pd Max
3.5W
hFE Gain
200
Quick Reference
The 2SA2013-TD-E is a PNP bipolar junction transistor in a SOT-89 package, manufactured by onsemi. It supports a breakdown voltage of 50V and continuous collector current of 4A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 4A | Max current handling |
| Power Dissipation (Pd) | 3.5W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 360MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 200 | 3.5W | onsemi 📄 PDF |
| LBTP560Y3T1G | PNP | SOT-89 | 60V | 4.3A | 100 | 550mW | LRC 📄 PDF |
| PBSS304PX | PNP | SOT-89 | 60V | 4.3A | 300 | 2.1W | Slkor 📄 PDF |
| ZXTP2012ZTA | PNP | SOT-89 | 60V | 4.3A | 45 | 1.5W | DIODES 📄 PDF |
| PBSS4041PX | PNP | SOT-89 | 60V | 5A | 120 | 2.5W | Nexperia 📄 PDF |
| 115 | PNP | SOT-89 | 80V | 4A | 200 | 1.4W | Nexperia 📄 PDF |