DOP20N06 MOSFET Datasheet & Specifications

N-Channel TO-220 Logic-Level DOINGTER
Vds Max
60V
Id Max
20A
Rds(on)
35mΩ@10V
Vgs(th)
2.5V

Quick Reference

The DOP20N06 is an N-Channel MOSFET in a TO-220 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDOINGTEROriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)52.1WMax thermal limit
On-Resistance (Rds(on))35mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)19nC@10VSwitching energy
Input Capacitance (Ciss)1.027nFInternal gate capacitance
Output Capacitance (Coss)65pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS020N06SRA N-Channel TO-220 60V 225A 1.9mΩ@10V
2.5mΩ@4.5V
1.6V
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CSD19505KCS N-Channel TO-220 80V 208A 2.6mΩ@10V 2.6V
CRST030N10N N-Channel TO-220 100V 180A 2.3mΩ@10V 3V
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SFP032N100C3 N-Channel TO-220 100V 260A 2.6mΩ@10V 3V
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IPP072N10N3G(UMW) N-Channel TO-220 100V 80A 6.2mΩ@10V 2.7V
TK34E10N1 N-Channel TO-220 100V 75A 7.9mΩ@10V 2V
TOSHIBA 📄 PDF
S1IX(S N-Channel TO-220 100V 45A 16mΩ@10V 2.2V
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