IRF540N MOSFET Datasheet & Specifications
N-Channel
TO-220
Logic-Level
DOINGTER
Vds Max
100V
Id Max
45A
Rds(on)
16mΩ@10V
Vgs(th)
2.2V
Quick Reference
The IRF540N is an N-Channel MOSFET in a TO-220 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 45A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 45A | Max current handling |
| Power Dissipation (Pd) | 95W | Max thermal limit |
| On-Resistance (Rds(on)) | 16mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 15.6nC@10V | Switching energy |
| Input Capacitance (Ciss) | 916pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPP072N10N3G(UMW) | N-Channel | TO-220 | 100V | 80A | 6.2mΩ@10V | 2.7V | UMW 📄 PDF |
| TK34E10N1 | N-Channel | TO-220 | 100V | 75A | 7.9mΩ@10V | 2V | TOSHIBA 📄 PDF |