IPP072N10N3G(UMW) MOSFET Datasheet & Specifications

N-Channel TO-220 Logic-Level UMW
Vds Max
100V
Id Max
80A
Rds(on)
6.2mΩ@10V
Vgs(th)
2.7V

Quick Reference

The IPP072N10N3G(UMW) is an N-Channel MOSFET in a TO-220 package, manufactured by UMW. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)150WMax thermal limit
On-Resistance (Rds(on))6.2mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.7VVoltage required to turn on
Gate Charge (Qg)68nC@10VSwitching energy
Input Capacitance (Ciss)3.69nFInternal gate capacitance
Output Capacitance (Coss)646pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CRST030N10N N-Channel TO-220 100V 180A 2.3mΩ@10V 3V
CRMICRO 📄 PDF
SFP032N100C3 N-Channel TO-220 100V 260A 2.6mΩ@10V 3V
SCILICON 📄 PDF