CSD19505KCS MOSFET Datasheet & Specifications
N-Channel
TO-220
Logic-Level
TI
Vds Max
80V
Id Max
208A
Rds(on)
2.6mΩ@10V
Vgs(th)
2.6V
Quick Reference
The CSD19505KCS is an N-Channel MOSFET in a TO-220 package, manufactured by TI. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 208A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 208A | Max current handling |
| Power Dissipation (Pd) | 300W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.6V | Voltage required to turn on |
| Gate Charge (Qg) | 76nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.82nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.08nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SFP032N100C3 | N-Channel | TO-220 | 100V | 260A | 2.6mΩ@10V | 3V | SCILICON 📄 PDF |