DOD70N07 MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Current
DOINGTER
Vds Max
70V
Id Max
70A
Rds(on)
8.6mΩ@10V
Vgs(th)
4V
Quick Reference
The DOD70N07 is an N-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 70V and a continuous drain current of 70A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 70V | Max breakdown voltage |
| Continuous Drain Current (Id) | 70A | Max current handling |
| Power Dissipation (Pd) | 116W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 33nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| PTD90N08 | N-Channel | TO-252 | 80V | 90A | 7.2mΩ@10V | 3V | HT(Shenzhen J... 📄 PDF |
| IPD096N08N3GATMA1 | N-Channel | TO-252 | 80V | 73A | 9.6mΩ@10V | 3.5V | Infineon 📄 PDF |
| YFWG120N085AD | N-Channel | TO-252 | 85V | 120A | 5mΩ@10V | 4V | YFW 📄 PDF |
| NSH045N100S | N-Channel | TO-252 | 100V | 120A | 4.5mΩ@10V | 3V | NH 📄 PDF |
| YFW120N10AD | N-Channel | TO-252 | 100V | 120A | 4.6mΩ@10V | 3V | YFW 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| IPD068N10N3G(UMW) | N-Channel | TO-252 | 100V | 90A | 5.7mΩ@10V | 2.7V | UMW 📄 PDF |
| MDDG10R08D | N-Channel | TO-252 | 100V | 75A | 6.5mΩ@10V | 2V | MDD(Microdiod... 📄 PDF |
| HB10N085SG | N-Channel | TO-252 | 100V | 80A | 6.7mΩ@10V | 1.7V | R+O 📄 PDF |
| CMD060N10 | N-Channel | TO-252 | 100V | 80A | 7mΩ@10V | 4V | Cmos 📄 PDF |
| AGMH065N10D | N-Channel | TO-252 | 100V | 100A | 8mΩ@10V | 4V | AGMSEMI 📄 PDF |
| OSD100N10G | N-Channel | TO-252 | 100V | 100A | 8mΩ@10V | 2.5V | OSEN 📄 PDF |
| CMD060N12 | N-Channel | TO-252 | 120V | 100A | 5.6mΩ@10V | 3V | Cmos 📄 PDF |