YFWG120N085AD MOSFET Datasheet & Specifications

N-Channel TO-252 High-Current YFW
Vds Max
85V
Id Max
120A
Rds(on)
5mΩ@10V
Vgs(th)
4V

Quick Reference

The YFWG120N085AD is an N-Channel MOSFET in a TO-252 package, manufactured by YFW. It supports a drain-source breakdown voltage of 85V and a continuous drain current of 120A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)85VMax breakdown voltage
Continuous Drain Current (Id)120AMax current handling
Power Dissipation (Pd)208WMax thermal limit
On-Resistance (Rds(on))5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)56nC@10VSwitching energy
Input Capacitance (Ciss)3.365nFInternal gate capacitance
Output Capacitance (Coss)1.264nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NSH045N100S N-Channel TO-252 100V 120A 4.5mΩ@10V 3V
YFW120N10AD N-Channel TO-252 100V 120A 4.6mΩ@10V 3V
SP010N04BGTH N-Channel TO-252 100V 120A 5mΩ@10V
6.5mΩ@4.5V
1.7V
Siliup 📄 PDF