IPD068N10N3G(UMW) MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
UMW
Vds Max
100V
Id Max
90A
Rds(on)
5.7mΩ@10V
Vgs(th)
2.7V
Quick Reference
The IPD068N10N3G(UMW) is an N-Channel MOSFET in a TO-252 package, manufactured by UMW. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 90A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UMW | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 90A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.7V | Voltage required to turn on |
| Gate Charge (Qg) | 51nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 3.69nF | Internal gate capacitance |
| Output Capacitance (Coss) | 646pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NSH045N100S | N-Channel | TO-252 | 100V | 120A | 4.5mΩ@10V | 3V | NH 📄 PDF |
| YFW120N10AD | N-Channel | TO-252 | 100V | 120A | 4.6mΩ@10V | 3V | YFW 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| OSD100N10G | N-Channel | TO-252 | 100V | 100A | 8mΩ@10V | 2.5V | OSEN 📄 PDF |
| CMD060N12 | N-Channel | TO-252 | 120V | 100A | 5.6mΩ@10V | 3V | Cmos 📄 PDF |