DMN3016lss-13 MOSFET Datasheet & Specifications

N-Channel SO-8 Logic-Level DIODES
Vds Max
30V
Id Max
10.3A
Rds(on)
16mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The DMN3016lss-13 is an N-Channel MOSFET in a SO-8 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 10.3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)10.3AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))16mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)25.1nC@10VSwitching energy
Input Capacitance (Ciss)1.415nFInternal gate capacitance
Output Capacitance (Coss)119pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
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SI4134DY-T1-GE3 N-Channel SO-8 30V 14A 11.5mΩ@10V
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AP3020 N-Channel SO-8 30V 11.8A 14.5mΩ@10V 3V
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SI4840BDY-T1-GE3 N-Channel SO-8 40V 19A 12mΩ@4.5V 3V
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FDS5670-NL-VB N-Channel SO-8 60V 12A 12mΩ@10V
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STS7NF60L-VB N-Channel SO-8 60V 12A 12mΩ@10V
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SI4058DY-T1-GE3 N-Channel SO-8 100V 10.3A 26mΩ@10V 2.8V
VISHAY 📄 PDF