IRF7807ATRPBF-VB MOSFET Datasheet & Specifications
N-Channel
SO-8
Logic-Level
VBsemi Elec
Vds Max
30V
Id Max
13A
Rds(on)
8mΩ@10V;11mΩ@4.5V
Vgs(th)
3V
Quick Reference
The IRF7807ATRPBF-VB is an N-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 13A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13A | Max current handling |
| Power Dissipation (Pd) | 4.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 8mΩ@10V;11mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@10V | Switching energy |
| Input Capacitance (Ciss) | 800pF | Internal gate capacitance |
| Output Capacitance (Coss) | 165pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRF7832TRPBF | N-Channel | SO-8 | 30V | 20A | 4.8mΩ@4.5V | 2.32V | Infineon 📄 PDF |
| SI4160DY-T1-GE3 | N-Channel | SO-8 | 30V | 25.4A | 6.3mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| APM4828KC-TRL-VB | N-Channel | SO-8 | 30V | 13A | 8mΩ@10V 11mΩ@4.5V |
1V | VBsemi Elec 📄 PDF |
| VBA1210 | N-Channel | SO-8 | 30V | 13A | 8mΩ@10V 11mΩ@4.5V |
3V | VBsemi Elec 📄 PDF |
| SI4134DY-T1-GE3 | N-Channel | SO-8 | 30V | 14A | 11.5mΩ@10V 14.5mΩ@4.5V |
2.5V | VISHAY 📄 PDF |
| SI4840BDY-T1-GE3 | N-Channel | SO-8 | 40V | 19A | 12mΩ@4.5V | 3V | VISHAY 📄 PDF |
| SQ4470EY-T1_GE3 | N-Channel | SO-8 | 60V | 16A | 14mΩ@6V | 3.5V | VISHAY 📄 PDF |