SI4134DY-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
SO-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
14A
Rds(on)
11.5mΩ@10V;14.5mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SI4134DY-T1-GE3 is an N-Channel MOSFET in a SO-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 14A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 14A | Max current handling |
| Power Dissipation (Pd) | 5W | Max thermal limit |
| On-Resistance (Rds(on)) | 11.5mΩ@10V;14.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 15.4nC@10V;7.9nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 846pF | Internal gate capacitance |
| Output Capacitance (Coss) | 187pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRF7832TRPBF | N-Channel | SO-8 | 30V | 20A | 4.8mΩ@4.5V | 2.32V | Infineon 📄 PDF |
| SI4160DY-T1-GE3 | N-Channel | SO-8 | 30V | 25.4A | 6.3mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| SI4840BDY-T1-GE3 | N-Channel | SO-8 | 40V | 19A | 12mΩ@4.5V | 3V | VISHAY 📄 PDF |