AP3020 MOSFET Datasheet & Specifications

N-Channel SO-8 Logic-Level ALLPOWER
Vds Max
30V
Id Max
11.8A
Rds(on)
14.5mΩ@10V
Vgs(th)
3V

Quick Reference

The AP3020 is an N-Channel MOSFET in a SO-8 package, manufactured by ALLPOWER. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 11.8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerALLPOWEROriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)11.8AMax current handling
Power Dissipation (Pd)2.5WMax thermal limit
On-Resistance (Rds(on))14.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)16.8nCSwitching energy
Input Capacitance (Ciss)1.28nFInternal gate capacitance
Output Capacitance (Coss)125pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF7832TRPBF N-Channel SO-8 30V 20A 4.8mΩ@4.5V 2.32V
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SI4160DY-T1-GE3 N-Channel SO-8 30V 25.4A 6.3mΩ@4.5V 2.4V
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IRF7807ATRPBF-VB N-Channel SO-8 30V 13A 8mΩ@10V
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APM4828KC-TRL-VB N-Channel SO-8 30V 13A 8mΩ@10V
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VBA1210 N-Channel SO-8 30V 13A 8mΩ@10V
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SI4134DY-T1-GE3 N-Channel SO-8 30V 14A 11.5mΩ@10V
14.5mΩ@4.5V
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SI4840BDY-T1-GE3 N-Channel SO-8 40V 19A 12mΩ@4.5V 3V
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FDS5670-NL-VB N-Channel SO-8 60V 12A 12mΩ@10V
15mΩ@4.5V
3V
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STS7NF60L-VB N-Channel SO-8 60V 12A 12mΩ@10V
15mΩ@4.5V
3V
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SQ4470EY-T1_GE3 N-Channel SO-8 60V 16A 14mΩ@6V 3.5V
VISHAY 📄 PDF