CXT5401 Datasheet & Equivalents

PNP SOT-89 General Purpose MSKSEMI
VCEO
150V
Ic Max
500mA
Pd Max
500mW
hFE Gain
80

Quick Reference

The CXT5401 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by MSKSEMI. It supports a breakdown voltage of 150V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
PXT5401 PNP SOT-89 150V 500mA 300 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
DXT5401-13 PNP SOT-89 150V 600mA 60 1W
FCX555TA PNP SOT-89 150V 700mA 100 1.5W
2SA1013(RANGE:160-320) PNP SOT-89 160V 1A 160 500mW
2SA1013-JSM PNP SOT-89 160V 1A 320 500mW
2SA1013Y PNP SOT-89 160V 1A 320 500mW
2SA1013Y-2AF PNP SOT-89 160V 1A 320 500mW
A1013Y-2AF PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF
MMBTA92 PNP SOT-89 300V 500mA 25 500mW
MPSA92U PNP SOT-89 300V 500mA - 500mW