FCX555TA Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
150V
Ic Max
700mA
Pd Max
1.5W
hFE Gain
100
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Quick Reference

The FCX555TA is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 150V and continuous collector current of 700mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)700mAMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current1nALeakage current when OFF
Operating Temp-65℃~+150℃Safe junction temperature range

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