2SA1013-Y Datasheet & Equivalents
PNP
SOT-89
General Purpose
FUXINSEMI
VCEO
160V
Ic Max
1A
Pd Max
500mW
hFE Gain
320
Quick Reference
The 2SA1013-Y is a PNP bipolar junction transistor in a SOT-89 package, manufactured by FUXINSEMI. It supports a breakdown voltage of 160V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FUXINSEMI | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 320 | Base signal amplification ratio |
| Transition Frequency (fT) | 15MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SA1013-JSM | PNP | SOT-89 | 160V | 1A | 320 | 500mW | JSMSEMI 📄 PDF |
| 2SA1013Y | PNP | SOT-89 | 160V | 1A | 320 | 500mW | Shikues 📄 PDF |
| 2SA1013Y-2AF | PNP | SOT-89 | 160V | 1A | 320 | 500mW | FOSAN 📄 PDF |
| A1013Y-2AF | PNP | SOT-89 | 160V | 1A | 320 | 500mW | FOSAN 📄 PDF |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 320 | 500mW | YONGYUTAI 📄 PDF |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 320 | 500mW | DOWO 📄 PDF |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 320 | 500mW | R+O 📄 PDF |
| 2SA1013(RANGE:160-320) | PNP | SOT-89 | 160V | 1A | 160 | 500mW | JSCJ 📄 PDF |