DXT5401-13 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
150V
Ic Max
600mA
Pd Max
1W
hFE Gain
60

Quick Reference

The DXT5401-13 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)150VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FCX555TA PNP SOT-89 150V 700mA 100 1.5W
2SA1013(RANGE:160-320) PNP SOT-89 160V 1A 160 500mW
2SA1013-JSM PNP SOT-89 160V 1A 320 500mW
2SA1013Y PNP SOT-89 160V 1A 320 500mW
2SA1013Y-2AF PNP SOT-89 160V 1A 320 500mW
A1013Y-2AF PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF