BFS19,215 Datasheet & Equivalents
NPN
SOT-23
General Purpose
Nexperia
VCEO
20V
Ic Max
30mA
Pd Max
250mW
hFE Gain
65
Quick Reference
The BFS19,215 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Nexperia. It supports a breakdown voltage of 20V and continuous collector current of 30mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 20V | Max breakdown voltage |
| Collector Current (Ic) | 30mA | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| DC Current Gain (hFE) | 65 | Base signal amplification ratio |
| Transition Frequency (fT) | 260MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SC2714Y | NPN | SOT-23 | 20V | 50mA | 20 | 225mW | Shikues 📄 PDF |
| MMBTH10 | NPN | SOT-23 | 20V | 50mA | 200 | 200mW | BORN 📄 PDF |
| S9018 | NPN | SOT-23 | 20V | 50mA | 200 | 300mW | FOSAN 📄 PDF |
| MMBTH10 | NPN | SOT-23 | 25V | 50mA | 60 | 225mW | Guangdong Hot... 📄 PDF |
| MMBTH10 | NPN | SOT-23 | 25V | 50mA | 60 | 225mW | UMW 📄 PDF |
| MMBTH10 | NPN | SOT-23 | 25V | 50mA | 60 | 225mW | TWGMC 📄 PDF |
| MMBTH10-6AF | NPN | SOT-23 | 25V | 50mA | 200 | 225mW | FOSAN 📄 PDF |
| MMBT5089LT1G | NPN | SOT-23 | 25V | 50mA | 400 | 300mW | onsemi 📄 PDF |
| MMBT5088LT1G | NPN | SOT-23 | 30V | 50mA | 300 | 225mW | onsemi 📄 PDF |