BC857S Transistor Datasheet & Specifications

PNP BJT | HT(Shenzhen Jinyu Semicon)

PNPSOT-363General Purpose
VCEO
45V
Ic Max
200mA
Pd Max
300mW
Gain
-
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Quick Reference

The BC857S is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 45V breakdown voltage and 200mA continuous collector current. Download the BC857S datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-363Physical mounting
VCEO45VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo200MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MBT3906DW1T1G-HXYPNPSOT-36340V200mA200mW
MMDT3906PNPSOT-36340V200mA200mW
MMBT3906WHPNPSOT-36340V200mA200mW
BCM857BSPNPSOT-36345V200mA300mW
MMDT3906PNPSOT-36340V200mA200mW
BC857BSPNPSOT-36345V200mA300mW
MMDT3906DWPNPSOT-363-40V200mA
BC857BSPNPSOT-36345V200mA300mW
BCM857BSPNPSOT-36345V200mA300mW
BC857BSPNPSOT-36345V200mA300mW
View all SOT-363 PNP Transistors ›