BC847PN Datasheet & Equivalents

NPN+PNP SOT-363 General Purpose LGE
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
450

Quick Reference

The BC847PN is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by LGE. It supports a breakdown voltage of 45V and continuous collector current of 100mA per channel.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityNPN+PNPConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)450Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)650mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current15nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC847BPN NPN+PNP SOT-363 45V 100mA 475 200mW
ChipNobo ๐Ÿ“„ PDF
115-CN NPN+PNP SOT-363 45V 100mA 200 380mW
LBC847BPDW1T1G NPN+PNP SOT-363 45V 100mA 200 380mW
LBC847CPDW1T1G NPN+PNP SOT-363 50V 100mA 80 200mW
ST(Semtech) ๐Ÿ“„ PDF
MMDTX441DW NPN+PNP SOT-363 50V 100mA 0.047 385mW
MMUN5335DW NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
CMKT5078TR-HXY NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
UMZ1NFHATR-HXY NPN+PNP SOT-363 50V 150mA 2.1 150mW
UMF28NTR NPN+PNP SOT-363 65V 100mA 450 200mW
BC846BPN NPN+PNP SOT-363 65V 100mA 200 380mW
LBC846BPDW1T1G NPN+PNP SOT-363 65V 100mA 200 200mW
GOODWORK ๐Ÿ“„ PDF