UMZ1NFHATR-HXY Datasheet & Equivalents
NPN+PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
560
Quick Reference
The UMZ1NFHATR-HXY is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 50V and continuous collector current of 150mA per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 150mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 560 | Base signal amplification ratio |
| Transition Frequency (fT) | 180MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |