BC847BPN,115-CN Datasheet & Equivalents

NPN+PNP SOT-363 General Purpose ChipNobo
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
475

Quick Reference

The BC847BPN,115-CN is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by ChipNobo. It supports a breakdown voltage of 45V and continuous collector current of 100mA per channel.

Technical Specifications

ParameterValueDescription
ManufacturerChipNoboOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityNPN+PNPConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)475Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)650mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current15nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BC847PN NPN+PNP SOT-363 45V 100mA 450 200mW
BC847PN NPN+PNP SOT-363 45V 100mA 450 200mW
TECH PUBLIC ๐Ÿ“„ PDF
LBC847BPDW1T1G NPN+PNP SOT-363 45V 100mA 200 380mW
LBC847CPDW1T1G NPN+PNP SOT-363 45V 100mA 200 380mW
BC847PN NPN+PNP SOT-363 45V 100mA 200 200mW
MMDTX441DW NPN+PNP SOT-363 50V 100mA 80 200mW
ST(Semtech) ๐Ÿ“„ PDF
MMUN5335DW NPN+PNP SOT-363 50V 100mA 0.047 385mW
CMKT5078TR-HXY NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
UMZ1NFHATR-HXY NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
UMF28NTR NPN+PNP SOT-363 50V 150mA 2.1 150mW
BC846BPN NPN+PNP SOT-363 65V 100mA 450 200mW
LBC846BPDW1T1G NPN+PNP SOT-363 65V 100mA 200 380mW
BC846BPN NPN+PNP SOT-363 65V 100mA 200 200mW
GOODWORK ๐Ÿ“„ PDF