MMUN5335DW Datasheet & Equivalents

NPN+PNP SOT-363 General Purpose YFW
VCEO
50V
Ic Max
100mA
Pd Max
385mW
hFE Gain
0.047

Quick Reference

The MMUN5335DW is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by YFW. It supports a breakdown voltage of 50V and continuous collector current of 100mA per channel.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityNPN+PNPConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)385mWMax thermal limit
DC Current Gain (hFE)0.047Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current2.2kฮฉLeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMDTX441DW NPN+PNP SOT-363 50V 100mA 80 200mW
ST(Semtech) ๐Ÿ“„ PDF
UMF28NTR NPN+PNP SOT-363 50V 150mA 2.1 150mW
CMKT5078TR-HXY NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
UMZ1NFHATR-HXY NPN+PNP SOT-363 50V 150mA 560 150mW
HXY MOSFET ๐Ÿ“„ PDF
LBC846BPDW1T1G NPN+PNP SOT-363 65V 100mA 200 380mW
BC846BPN NPN+PNP SOT-363 65V 100mA 200 200mW
GOODWORK ๐Ÿ“„ PDF
BC846BPN NPN+PNP SOT-363 65V 100mA 450 200mW